SCT040H65G3SAG
Obsolete
Design Win
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 straight leads package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • All features

    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Source sensing pin for increased efficiency

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STMicroelectronics - SCT040H65G3SAG

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