SCT070W120G3-4AG

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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • All features

    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency

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STMicroelectronics - SCT070W120G3-4AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT070W120G3-4AG
Active
HiP247-4 Automotive Ecopack2

SCT070W120G3-4AG

Package:

HiP247-4

Material Declaration**:

Marketing Status

Active

Package

HiP247-4

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors