SCT20N170AG

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Automotive-grade silicon carbide Power MOSFET 1700 V, 64 mOhm typ., 43 A in an HiP247 package

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Product overview

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

  • All features

    • AEC-Q101 rev. C qualified
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Very high operating junction temperature capability (TJ = 200 °C)

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCT20N170AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCT20N170AG
Active
HIP247 Automotive Ecopack2

SCT20N170AG

Package:

HIP247

Material Declaration**:

Marketing Status

Active

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors