SCTHS200N120G3AG

Evaluation
Design Win Education

Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mOhm typ., 170 A in a STPAK package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

  • All features

    • AEC-Q101 qualified
    • Very low RDS(on) over the entire temperature range
    • High speed switching performances
    • Very fast and robust intrinsic body diode
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency

EDA Symbols, Footprints and 3D Models

STMicroelectronics - SCTHS200N120G3AG

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTHS200N120G3AG
Evaluation
STPAK Automotive Ecopack2

SCTHS200N120G3AG

Package:

STPAK

Material Declaration**:

Marketing Status

Evaluation

Package

STPAK

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SCTHS200N120G3AG
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SCTHS200N120G3AG Evaluation

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SCTHS200N120G3AG

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors