SCTW100N120G2AG

Active

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package

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  • This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

    Key Features

    • AEC-Q101 qualified
    • High speed switching performance
    • Very fast and robust intrinsic body diode
    • Low capacitances
    • Very high operating junction temperature capability (TJ = 200 °C)

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTW100N120G2AG
Active
HIP247 Automotive Ecopack2

SCTW100N120G2AG

Package:

HIP247

Material Declaration**:

PDF XML

Marketing Status

Active

Package

HIP247

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
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Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Country of Origin
Budgetary Price (US$)*/Qty
min
max
SCTW100N120G2AG No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tube HIP247 - - CHINA

SCTW100N120G2AG

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

ECCN (EU)

NEC

Packing Type

Tube

Package

HIP247

Operating Temperature (°C)

(min)

-

(max)

-

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors