SCTWA90N65G2V-4

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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

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Product overview

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

  • All features

    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency

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STMicroelectronics - SCTWA90N65G2V-4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
SCTWA90N65G2V-4
Active
HiP247-4 Industrial Ecopack2

SCTWA90N65G2V-4

Package:

HiP247-4

Material Declaration**:

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Marketing Status

Active

Package

HiP247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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SCTWA90N65G2V-4
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors