STB16N90K5

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Design Win

N-channel 900 V, 280 mOhm typ., 15 A MDmesh K5 Power MOSFET in a D2PAK package

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Product overview

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

  • All features

    • Industry’s lowest RDS(on) x area
    • Industry’s best FoM (figure of merit)
    • Ultra-low gate charge
    • 100% avalanche tested
    • Zener-protected

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB16N90K5

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB16N90K5
Active
D2PAK Industrial Ecopack2

STB16N90K5

Package:

D2PAK

Material Declaration**:

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Marketing Status

Active

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors