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STD10NM60ND
Obsolete
Design Win
N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package

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Product overview

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

  • All features

    • Fast-recovery body diode
    • Low gate charge and input capacitance
    • Low on-resistance RDS(on)
    • 100% avalanche tested
    • High dv/dt ruggedness
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STMicroelectronics - STD10NM60ND

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