STD155N3LH6
Obsolete
Design Win
N-channel 30 V, 2.4 mOhm, 80 A STripFET H6 Power MOSFET in a DPAK package

Download datasheet

Product overview

Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STD155N3LH6

Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.

Please select one model supplier :

Symbols

Symbols

Footprints

Footprints

3D model

3D models