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This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
Key Features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate input resistance
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | ECCN (US) | Country of Origin | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|
| STD26P3LLH6 | DPAK | Tape And Reel | Active | 0.68 | 1000 | EAR99 | CHINA | Check Availability | Get sample |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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Mobile Applications
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STD26P3LLH6 | Active | DPAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
