Product overview
Description
This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages-
All features
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate input resistance
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STD26P3LLH6
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Symbols
Footprints
3D models
All resources
| Resource title | Version | Latest update |
|---|
SPICE models (1)
| Resource title | Version | Latest update | ||
|---|---|---|---|---|
| ZIP | 1.0 | 11 Dec 2020 | 11 Dec 2020 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STD26P3LLH6 | Active | DPAK | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
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| Part Number | Order from distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||
| STD26P3LLH6 | 3 distributors | Active | EAR99 | NEC | Tape and Reel | DPAK | - | - | CHINA | | ||
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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors