The new SuperMESH3 series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application.
- 100% avalanche tested
- Gate charge minimized
- Extremely large avalanche performance
- Very low intrinsic capacitances
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Choose among our MDmesh MOSFET Series, featuring fast recovery diode (DK5) and very high voltage super-junction MOSFETs (K5).
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STF7N95K3
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Quality and Reliability
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