This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- 10 μs of short-circuit withstand time
- Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
- Tight parameter distribution
- Positive VCE(sat) temperature coefficient
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STMicroelectronics - STG50M120F3D7
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