Product overview
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
-
All features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
- Safe paralleling
- Tight parameter distribution
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STG60H65FBD7
Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
Please select one model supplier :
Symbols
Footprints
3D models