STG60H65FBD7

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Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

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Product overview

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • High speed switching series
    • Minimized tail current
    • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
    • Safe paralleling
    • Tight parameter distribution

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STMicroelectronics - STG60H65FBD7

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Quality and Reliability

Part Number Marketing Status Grade Material Declaration**
STG60H65FBD7
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Industrial

STG60H65FBD7

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Industrial

Material Declaration**:

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(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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