STGB7H60DF

NRND
Design Win

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • High speed switching
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Short-circuit rated
    • Ultrafast soft recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGB7H60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STGB7H60DF
NRND
Trench gate field-stop IGBT, H series 600 V, 7 A high speed D2PAK Industrial Ecopack2 - -

STGB7H60DF

Package:

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Material Declaration**:

Marketing Status

NRND

General Description

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Package

D2PAK

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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STGB7H60DF
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Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors