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This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
Key Features
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Budgetary Price (US$)* | Quantity | Eoff (mJ) (typ) (@ Tc = 125 °C) | PTOT (W) (max) | ECCN (US) | Country of Origin | More info | Order from Distributors | Order from ST |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STGD19N40LZ | DPAK | Tape And Reel | Active | 0.8 | 1000 | - | 125 | EAR99 | CHINA | Check Availability | Buy now |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STGD19N40LZ | Active | DPAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
