-
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.
Key Features
- AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | Eoff (mJ) (typ) (@ Tc=125 °C) | PTOT (W) (max) | ECCN (US) | Country of Origin | Approximate Price (US$)* / Qty | Order from ST | Order from Distributors |
|---|---|---|---|---|---|---|---|---|---|---|
| STGD19N40LZ | DPAK | Tape And Reel | Active | - | 125 | EAR99 | CHINA | 1.91 / 1k | Buy now | Check Availability |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
Featured Videos
Mobile Applications
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|
| STGD19N40LZ | Active | DPAK | Automotive | Ecopack1 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
