ST offers a comprehensive portfolio of IGBTs (Insulated Gate Bipolar Transistors) ranging from 300 to 1250 V, both in planar punch-through (PT) and trench-gate field-stop (TFS) technologies. IGBTs are belonging to the STPOWER™ family.
Our IGBTs are available as bare die as well as packaged discrete components.
ST’s IGBT main characteristics:
Best trade-off between conduction and switch-off energy losses
Max. junction temperature up to 175 °C
Wide switching frequency range
Co-packaged anti-parallel diode option for improved power dissipation and optimal thermal management
Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.