STGF19NC60HD

Obsolete
Design Win

19 A, 600 V, very fast IGBT with Ultrafast diode

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Product overview

Description

These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

  • All features

    • Low on-voltage drop (VCE(sat))
    • Very soft Ultrafast recovery anti-parallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGF19NC60HD

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3D models