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  • This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key Features

    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 6 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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Technical Documentation

    • Description Version Size Action
      DS11392
      Trench gate field-stop IGBT, M series 650 V, 6 A low loss
      3.0
      961.01 KB
      PDF
      DS11392

      Trench gate field-stop IGBT, M series 650 V, 6 A low loss

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      IGBT datasheet tutorial

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STGF6M65DF2 PSpice model 1.0
      2.62 KB
      ZIP

      STGF6M65DF2 PSpice model

Publications and Collaterals

    • Description Version Size Action
      ST IGBT FINDER app for Android and iOS 1.0
      787.04 KB
      PDF

      ST IGBT FINDER app for Android and iOS

    • Description Version Size Action
      Electric vehicle (EV) ecosystem 1.1
      1.28 MB
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      Electric vehicle (EV) ecosystem

Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGF6M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 6 A low loss TO-220FP Industrial Ecopack2

STGF6M65DF2

Package:

Trench gate field-stop IGBT M series, 650 V 6 A low loss

Material Declaration**:

Marketing Status

Active

General Description

Trench gate field-stop IGBT M series, 650 V 6 A low loss

Package

TO-220FP

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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ECCN (US)
ECCN (EU)
Packing Type
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Temperature (°C) Budgetary Price (US$)*/Qty
More info
min
max
STGF6M65DF2 Available at 3 distributors

Distributor availability ofSTGF6M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 99 1 Order Now
ARROW EUROPE 4000 0 Order Now
MOUSER WORLDWIDE 1823 1 Order Now

Distributor reported inventory date: 2020-08-09

Distributor Name

DIGIKEY

Stock

99

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

4000

Min.Order

0

Region

EUROPE Order Now

MOUSER

Stock

1823

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-08-09

Sample & Buy Buy now
Active
EAR99 NEC Tube TO-220FP -55 175
MORE INFO

Country of Origin:

CHINA

General Description:

Trench gate field-stop IGBT M series, 650 V 6 A low loss

STGF6M65DF2

Marketing Status

Active

ECCN (US)

EAR99

Budgetary Price (US$)*/Qty

Distributor availability ofSTGF6M65DF2

Distributor Name
Region Stock Min. Order Third party link
DIGIKEY WORLDWIDE 99 1 Order Now
ARROW EUROPE 4000 0 Order Now
MOUSER WORLDWIDE 1823 1 Order Now

Distributor reported inventory date: 2020-08-09

Distributor Name

DIGIKEY

Stock

99

Min.Order

1

Region

WORLDWIDE Order Now

ARROW

Stock

4000

Min.Order

0

Region

EUROPE Order Now

MOUSER

Stock

1823

Min.Order

1

Region

WORLDWIDE Order Now

Distributor reported inventory date: 2020-08-09

ECCN (EU)

NEC

Packing Type

Tube

Package

TO-220FP

Operating Temperature (°C)

(min)

-55

(max)

175

Budgetary Price (US$)* / Qty

Country of Origin

CHINA

General Description

Trench gate field-stop IGBT M series, 650 V 6 A low loss

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors