STGSH80HB65DAG

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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Product overview

Description

This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

  • All features

    • AQG 324 qualified
    • High-speed switching series
    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.7 V (typ.) @ IC = 80 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance thanks to DBC substrate
    • Positive temperature VCE(sat) coefficient
    • Soft and very fast recovery antiparallel diode
    • Isolation rating of 3.4 kVrms/min

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STMicroelectronics - STGSH80HB65DAG

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGSH80HB65DAG
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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode ACEPACK SMIT Automotive Ecopack2

STGSH80HB65DAG

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

Material Declaration**:

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Marketing Status

Active

General Description

Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

Package

ACEPACK SMIT

Grade

Automotive

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode

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