Product overview
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
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All features
- Maximum junction temperature: TJ = 175 °C
- 6 μs of minimum short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 15 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast-recovery antiparallel diode
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STGW15M120DF3
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| Resource title | Version | Latest update |
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SPICE models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |