STGW30M65DF2

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Trench gate field-stop IGBT M series, 650 V 30 A low loss

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

  • All features

    • 6 µs of minimum short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Tight parameters distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode

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STMicroelectronics - STGW30M65DF2

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGW30M65DF2
Active
Trench gate field-stop IGBT M series, 650 V 30 A low loss TO-247 Industrial Ecopack2

STGW30M65DF2

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Trench gate field-stop IGBT M series, 650 V 30 A low loss

Material Declaration**:

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Marketing Status

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General Description

Trench gate field-stop IGBT M series, 650 V 30 A low loss

Package

TO-247

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Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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Trench gate field-stop IGBT M series, 650 V 30 A low loss

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