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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
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Product Specifications (1)
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13 Apr 2017
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Application Notes (2)
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13 Sep 2018
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Flyers (2)
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04 May 2020
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Brochures (1)
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23 Mar 2020
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Quality and Reliability
Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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STGW30M65DF2 |
Active
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Trench gate field-stop IGBT M series, 650 V 30 A low loss | TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
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min | max | |||||||||||||
STGW30M65DF2 | 2 distributors | Free Sample Buy Direct |
Active
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EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 30 A low loss |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors