-
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Featured Videos
All tools & software
All resources
Product Specifications (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 09 Jul 2015 |
09 Jul 2015
|
Application Notes (2)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 10 Jun 2015 |
10 Jun 2015
|
|||
| 07 Jan 2015 |
07 Jan 2015
|
Flyers (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 04 May 2020 |
04 May 2020
|
Brochures (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| 23 Mar 2020 |
23 Mar 2020
|
CAD/EDA Symbols, Footprints and Models
All resources
HW Model, CAD Libraries & SVD (1)
| Resource title | Latest update | |||
|---|---|---|---|---|
| ZIP | 30 May 2016 |
30 May 2016
|
Quality and Reliability
| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGW30M65DF2 |
Active
|
Trench gate field-stop IGBT M series, 650 V 30 A low loss | TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | More info | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| min | max | |||||||||||||
| STGW30M65DF2 | 1 distributors |
Active
|
EAR99 | NEC | Tube | TO-247 | -55 | 175 | CHINA | Trench gate field-stop IGBT M series, 650 V 30 A low loss | ||||
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors
