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These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Key Features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Sample & Buy
| Part Number | Package | Packing Type | Marketing Status | ECCN (US) | Country of Origin | General Description | Budgetary Price (US$)*/Qty | Order from ST | Order from Distributors |
|---|---|---|---|---|---|---|---|---|---|
| STGW30M65DF2 | TO-247 | Tube | Active | EAR99 | CHINA | Trench gate field-stop IGBT M series, 650 V 30 A low loss | Get sample | Check Availability |
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors
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| Part Number | Marketing Status | General Description | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|---|---|
| STGW30M65DF2 | Active | Trench gate field-stop IGBT M series, 650 V 30 A low loss | TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
