STGW30NC60VD

Obsolete
Design Win

40 A, 600 V, fast IGBT with UltraFAST diode

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Product overview

Description

This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.

  • All features

    • High current capability
    • High frequency operation up to 50 kHz
    • Very soft ultra fast recovery antiparallel diode

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STGW30NC60VD

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Footprints

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3D models