STGWA60V60DF

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600 V, 60 A very high speed trench gate field-stop IGBT

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Product overview

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • All features

    • Maximum junction temperature: TJ = 175 °C
    • Tail-less switching off
    • VCE(sat) = 1.85 V (typ.) @ IC = 60 A
    • Tight parameters distribution
    • Safe paralleling
    • Low thermal resistance
    • Very fast soft recovery antiparallel diode

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STMicroelectronics - STGWA60V60DF

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Quality and Reliability

Part Number Marketing Status General Description Package Grade RoHS Compliance Grade Material Declaration**
STGWA60V60DF
Active
600 V, 60 A very high speed trench gate field-stop IGBT TO-247 long leads Industrial Ecopack2

STGWA60V60DF

Package:

600 V, 60 A very high speed trench gate field-stop IGBT

Material Declaration**:

Marketing Status

Active

General Description

600 V, 60 A very high speed trench gate field-stop IGBT

Package

TO-247 long leads

Grade

Industrial

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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600 V, 60 A very high speed trench gate field-stop IGBT

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