These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency.
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Discover the MDmesh™ K5 Series of VHV MOSFETs (800 V - 1700 V), developed using ST's proprietary super-junction technology.
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EDA Symbols, Footprints and 3D Models
STMicroelectronics - STP10N95K5
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Quality and Reliability
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