STP34NM60ND

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Design Win

N-channel 600 V, 97 mOhm, 29 A FDmesh II Power MOSFET in a TO-220 package

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Product overview

Description

These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.

  • All features

    • The world’s best RDS(on)in TO-220 amongst the fast recovery diode devices
    • 100% avalanche tested
    • Low input capacitance and gate charge
    • Low gate input resistance
    • Extremely high dv/dt and avalanche capabilities

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STP34NM60ND

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Longevity Commitment Longevity Starting Date Material Declaration**
STP34NM60ND
Active
TO-220 Industrial Ecopack2 - -

STP34NM60ND

Package:

TO-220

Material Declaration**:

Marketing Status

Active

Package

TO-220

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors