The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
- Extremely high dv/dt capability
- Gate charge minimized
- 100% avalanche tested
- Very good manufacturing repeatability
- Very low intrinsic capacitances
Browse our power MOSFET portfolio, featuring a broad range of breakdown voltages from –100 V to 1700 V.
Choose among our MDmesh MOSFET Series, featuring fast recovery diode (DK5) and very high voltage super-junction MOSFETs (K5).
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STMicroelectronics - STP6NK90Z
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Quality and Reliability
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