Product overview
Description
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low on-resistance. The device also offers ultra-low capacitances for higher switching frequency operations.
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All features
- Very low on-resistance
- Very low capacitance and gate charge
- High avalanche ruggedness
EDA Symbols, Footprints and 3D Models
The STMicroelectronics team - STR1P2UH7
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