Product overview
Description
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
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All features
- Optimal RDS(on) x Qg trade-off @ 4.5V
- Switching losses reduced
- Conduction losses reduced
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STS9D8NH3LL
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