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STU10P6F6

Obsolete
Design Win

P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in IPAK package

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Product overview

Description

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

  • All features

    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STU10P6F6

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