Product overview
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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All features
- Ultra-low gate charge
- Very low FoM (figure of merit)
- Zener-protected
- 100% avalanche tested
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EDA Symbols, Footprints and 3D Models
All resources
| Resource title | Version | Latest update | Actions | Details | Download |
|---|
SPICE models (1)
| Resource title | Version | Latest update | Actions | Options | ||
|---|---|---|---|---|---|---|
| ZIP | 1.0 | 01 Aug 2015 | 01 Aug 2015 |
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STU8N80K5 | NRND Not recommended for New Design. Product is in volume production only to support customers ongoing production. EN | IPAK | Industrial | Ecopack2 | 10 | 2019-03-25T00:00:00.000+01:00 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors