These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
- Industry’s lowest RDS(on)
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
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Distributor availability ofSTW10N105K5
Distributor reported inventory date: 2020-08-03
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