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Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Key Features
- 100% avalanche tested
- High speed switching
- Intrinsic capacitances and Qg minimized
- Creepage distance path is 5.4 mm (typ.) for TO-3PF
- Fully isolated TO-3PF plastic packages
Featured Videos
All tools & software
All resources
Product Specifications (1)
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19 Sep 2016 |
19 Sep 2016
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Application Notes (4)
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13 Sep 2018
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Technical Notes & Articles (1)
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13 Nov 2016 |
13 Nov 2016
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User Manuals (1)
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21 Oct 2016 |
21 Oct 2016
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Flyers (3)
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22 Jan 2020 |
22 Jan 2020
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08 Jan 2021 |
08 Jan 2021
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08 May 2020 |
08 May 2020
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EDA Symbols, Footprints and 3D Models
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|---|
STW4N150 |
Active
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TO-247 | Industrial | Ecopack2 |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Order from Distributors | Order from ST | Marketing Status | ECCN (US) | ECCN (EU) | Packing Type | Package | Temperature (°C) | Country of Origin | Budgetary Price (US$)*/Qty | ||
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min | max | |||||||||||
STW4N150 | 8 distributors |
Active
|
EAR99 | NEC | Tube | TO-247 | -55 | 150 | CHINA |
Marketing Status
ActiveECCN (US)
EAR99Budgetary Price (US$)*/Qty
(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors