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ST’s 28/32 V LDMOS transistors targeting operation up to 1 GHz are ideal for applications such as repeaters, base stations and government wideband communications. They are available in both ceramic packages and the cost-effective Power SO-10RF plastic package.

Key features

  • Frequency: from HF to 1 GHz
  • Breakdown voltage BVDSS: >65 V
  • Supply voltage: up to 32 V
  • Output power: from 2 W up to 120 W
  • Gain: >14 dB
  • Efficiency: >50%
  • Available in die form

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