ST’s 28 to 50 V LDMOS transistors targeting operation up to 3.8 GHz feature a significant improvement in terms of RF performance (+4 dB gain, +15% efficiency), ruggedness (>20:1 VSWR) and reliability compared to the previous LDMOS generation. Available in both ceramic packages and in the cost-effective PowerSO-10RF plastic package, they are ideal for applications such as repeaters, base stations and government wideband communications.
Key features
- Operating frequency up to 3.8GHz
- Output power from few watts up to 400 W
- Efficiency >60%
- High gain and linearity
- Ruggedness: >20:1 VSWR all phases (CW)
- Available in die form
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ST50V10100
RF Power LDMOS transistor for frequencies up to 1.5 GHz
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LET9120
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST9060C
RF Power LDMOS transistor HF up to 1.5 GHz
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PD57060S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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RF2L42008CG2
8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
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ST9045C
RF Power LDMOS transistor HF up to 1.5 GHz
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LET9045C
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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SD57030
RF power transistor, the LdmoST family
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RF3L05250CB4
250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
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RF3L05400CB4
400 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
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ST16045
45 W, 28 V, 0.7 to 1.7 GHz RF Power LDMOS transistor
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PD57018-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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RF2L27015CG2
15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
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SD57030-01
RF power transistor, the LdmoST family
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RF2L27025CG2
25 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
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ST05250
250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
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ST36015
20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
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LET9045F
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST50V10200
200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor
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SD56060
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
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SD57045-01
RF power transistor, the LdmoST family
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SD57045
RF power transistor, the LdmoST family
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RF3L05150CB4
150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
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ST16010
10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
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RF3L05200CB4
200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
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STAC9200
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
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PD57030-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD57045-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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RF2L15200CB4
200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor
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RF5L15030CB2
30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
