Our 7 to 13.6V LDMOS transistors combine ST’s state-of-the-art LDMOS technologies with the advantages of surface mount packages such as the SOT-89, PowerFLAT™ and PowerSO-10RF to offer a cost-effective solution for applications up to 2 GHz such as commercial and public safety portable radios, marine portable radios, EPIRB, sonar buoys, UHF RFID, automatic meter readers, VHF/UHF alarm systems and wireless data modems.
Key features
- Operating frequency up to 2 GHz
- Output power from 1W to 35W
- Efficiency >60%
- High gain and linearity
- Wideband performances
- Available in die form
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PD55003L-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD54003-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84006L-E
RF Power LDMOS transistor
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PD85006-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55008-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84008L-E
RF Power LDMOS transistor
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PD85035-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD54008-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD85025-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55003-E
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
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PD85015-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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PD55015-E
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
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PD55025-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD84001
RF power transistor the LdmoST plastic family
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PD85004
RF power transistor the LdmoST plastic family
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PD84002
RF power transistor, the LdmoST plastic family
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PD54008L-E
RF power transistors, the LdmoST plastic family
