Our 7 to 13.6V LDMOS transistors combine ST’s state-of-the-art LDMOS technologies with the advantages of surface mount packages such as the SOT-89, PowerFLAT™ and PowerSO-10RF to offer a cost-effective solution for applications up to 2 GHz such as commercial and public safety portable radios, marine portable radios, EPIRB, sonar buoys, UHF RFID, automatic meter readers, VHF/UHF alarm systems and wireless data modems.
Key features
- Operating frequency up to 2 GHz
- Output power from 1W to 35W
- Efficiency >60%
- High gain and linearity
- Wideband performances
- Available in die form
- PD55003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD55015-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD55025-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD84001 RF power transistor the LdmoST plastic family
- PD55008-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
- PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD55035STR1-E 35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor
- PD55003-E RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
- PD54008L-E RF power transistors, the LdmoST plastic family