ST offers a broad portfolio of RF LDMOS transistors operating from a supply voltage ranging from 28 up to 50 V with high reliability. Targeting applications in the 1 MHz to 2.45 GHz frequency range, our RF LDMOS transistors feature high peak power (up to 1.4 kW) and high ruggedness capability.
Based on an optimized process layout resulting in improved RF performance, ST’s RF LDMOS transistors are ideal for:
- RF plasma generators
- Laser drivers
- Particle accelerators
- RF Cooking, Heating & Defrosting
- Magnetic Resonance Imaging (MRI)
- HF & VHF Communications
- FM & TV Broadcast
We offer a range of devices housed in ST’s innovative STAC® air cavity package featuring a 25% lower thermal resistance, providing a cost-effective solution.
To help engineers quickly get their designs to market, we offer a wide range of evaluation boards as well as several software simulators and analysis tools.
- RF4L15400CB4 650 W, 28/32 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L05500CB4 550 W, 50 V, HF to 250 MHz RF Power LDMOS transistor
- RF5L051K0CB4 1 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor
- RF4L10700CB4 700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
- ST24180 180 W, 32 V, 2.3 to 2.5 GHz RF Power LDMOS transistor
- RF5L05750CF2 750 W, 50 V, HF to 500 MHz RF power LDMOS transistor
- RF5L051K5CB4 1.5 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor
- RF5L051K4CB4 1.3 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor
- RF5L05950CF2 950 W, 50 V, HF to 500 MHz RF power LDMOS transistor
- RF5L052K0CB4 2 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor
- RF5L08350CB4 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08600CB4 650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF2L24280CB4 280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
- RF5L15030CB2 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
- RF5L15120CB4 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
