ST offers a broad portfolio of RF LDMOS transistors operating from a supply voltage ranging from 28 up to 50 V with high reliability. Targeting applications in the 1 MHz to 2.45 GHz frequency range, our RF LDMOS transistors feature high peak power (up to 1.4 kW) and high ruggedness capability.
Based on an optimized process layout resulting in improved RF performance, ST’s RF LDMOS transistors are ideal for:
- RF plasma generators
- Laser drivers
- Particle accelerators
- RF Cooking, Heating & Defrosting
- Magnetic Resonance Imaging (MRI)
- HF & VHF Communications
- FM & TV Broadcast
We offer a range of devices housed in ST’s innovative STAC® air cavity package featuring a 25% lower thermal resistance, providing a cost-effective solution.
To help engineers quickly get their designs to market, we offer a wide range of evaluation boards as well as several software simulators and analysis tools.
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RF4L10700CB4
700 W, 40 V, HF to 1 GHz RF power LDMOS transistor
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ST24180
180 W, 32 V, 2.3 to 2.5 GHz RF Power LDMOS transistor
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RF5L08350CB4
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
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RF5L08600CB4
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
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RF2L24280CB4
280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor
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RF5L15030CB2
30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor
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RF5L15120CB4
120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
