Product overview
Description
The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.
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All features
- Excellent thermal stability
- Common source configuration push-pull
- POUT = 180 W with 19 dB gain @ 860 MHz
- BeO-free package
EDA Symbols, Footprints and 3D Models
STMicroelectronics - LET9180
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