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  • The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.

    Key Features

    • Excellent thermal stability
    • Common source configuration
    • POUT = 3 W with 12 dB gain @ 500 MHz
    • New RF plastic package

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Technical Documentation

    • Description Version Size Action
      DS4692
      RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
      4.1
      639.01 KB
      PDF
      DS4692

      RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

    • Description Version Size Action
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      PD54003-E ADS model 1.0
      7.81 MB
      ZIP

      PD54003-E ADS model