Product overview
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
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All features
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package
EDA Symbols, Footprints and 3D Models
STMicroelectronics - PD57002-E
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