RF2L24280CB4

Obsolete
Design Win

280 W, 28 V, 2.4 to 2.5 GHz RF Power LDMOS transistor

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Product overview

Description

The RF2L24280CB4 is a 280 W, internally matched LDMOS FET, designed for multiple use especially RF energy applications including cooking, heating and medical in the frequency range from 2.4 to 2.5 GHz. It is qualified up to 32 V operation.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched pair transistors in push-pull configuration
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the European directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - RF2L24280CB4

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