RF3L05150CB4

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150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor

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Product overview

Description

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the european directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF3L05150CB4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF3L05150CB4
Active
LBB Industrial N/A

RF3L05150CB4

Package:

LBB

Material Declaration**:

PDF

Marketing Status

Active

Package

LBB

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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RF3L05150CB4 Available at distributors

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Active
EAR99 NEC Tape and Reel LBB - -

RF3L05150CB4 Active

Package:
LBB
ECCN (US):
EAR99

Part Number:

RF3L05150CB4

ECCN (EU):

NEC

Packing Type:

Tape and Reel

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-

Max:

-

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors