RF3L05200CB4

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200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

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Product overview

Description

The RF3L05200CB4 is a 200 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.
  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate/source voltage range for improved class C operation
    • In compliance with the European Directive 2002/95/EC

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STMicroelectronics - RF3L05200CB4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF3L05200CB4
Active
LBB Industrial N/A

RF3L05200CB4

Package:

LBB

Material Declaration**:

PDF XML

Marketing Status

Active

Package

LBB

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

Part Number
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ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
min
max
RF3L05200CB4 No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Tape And Reel LBB - - 100.0 / 100

RF3L05200CB4

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Tape And Reel

Package

LBB

Operating Temperature (°C)

(min)

-

(max)

-

(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors