RF3L05250CB4

Obsolete
Design Win

250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz

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Product overview

Description

The RF3L05250CB4 is a 250 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Large positive and negative gate-source voltage range for improved class C operation
    • In compliance with the European directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - RF3L05250CB4

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