RF4L10700CB4

Obsolete
Design Win

700 W, 40 V, HF to 1 GHz RF power LDMOS transistor

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Product overview

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency range. It can be used in class AB, B or C for both CW and pulse applications in narrow-band operation. It is qualified up to 40 V operation.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched pair transistors in push-pull configuration
    • Large positive and negative gate-source voltage range for improved class C operation
    • Optimized for Doherty applications
    • Excellent thermal stability, low HCI drift
    • In compliance with the European directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

The STMicroelectronics team - RF4L10700CB4

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