RF5L08600CB4

NRND
Design Win

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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Product overview

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

  • All features

    • High efficiency and linear gain operations
    • Integrated ESD protection
    • Internally matched pair transistors in push-pull configuration
    • Large positive and negative gate-source voltage range for improved class C operation
    • Excellent thermal stability, low HCI drift
    • In compliance with the european directive 2002/95/EC

EDA Symbols, Footprints and 3D Models

STMicroelectronics - RF5L08600CB4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
RF5L08600CB4
NRND
D4E Industrial N/A

RF5L08600CB4

Package:

D4E

Material Declaration**:

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Marketing Status

NRND

Package

D4E

Grade

Industrial

RoHS Compliance Grade

N/A

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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RF5L08600CB4
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RF5L08600CB4 NRND

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors