Product overview
Description
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
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All features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In compliance with the european directive 2002/95/EC
EDA Symbols, Footprints and 3D Models
All resources
Resource title | Version | Latest update |
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ADS models (1)
Resource title | Version | Latest update | ||
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ZIP | 1.0 | 26 Sep 2022 | 26 Sep 2022 |
Quality and Reliability
Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Material Declaration** |
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RF5L08600CB4 | NRND | D4E | Industrial | N/A |
RF5L08600CB4
Package:
D4EMaterial Declaration**:
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
Part Number | Marketing Status | Budgetary Price (US$)*/Qty | Order from ST | Order from distributors | Package | Packing Type | RoHS | Country of Origin | ECCN (US) | ECCN (EU) | Operating Temperature (°C) (min) | Operating Temperature (°C) (max) | |
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RF5L08600CB4 | | | distributors No availability of distributors reported, please contact our sales office |
RF5L08600CB4 NRND
(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors