Product overview
Description
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
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All features
- High efficiency and linear gain operations
- Integrated ESD protection
- Internally matched pair transistors in push-pull configuration
- Large positive and negative gate-source voltage range for improved class C operation
- Excellent thermal stability, low HCI drift
- In compliance with the european directive 2002/95/EC
EDA Symbols, Footprints and 3D Models
The STMicroelectronics team - RF5L08600CB4
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All resources
| Resource title | Version | Latest update |
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ADS models (1)
| Resource title | Version | Latest update | |||
|---|---|---|---|---|---|
| ZIP | 1.0 | 26 Sep 2022 | 26 Sep 2022 |