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  • The STAC3932B is an N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 250 MHz.

    Key Features

    • Excellent thermal stability
    • Common source push-pull configuration
    • POUT = 580 W typ. with 24.6 dB gain at 123 MHz
    • In compliance with the 2002/95/EC European directive
    • ST air-cavity STAC packaging technology

Recommended for you

00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS6157
      HF/VHF/UHF RF power N-channel MOSFET
      8.0
      556.97 KB
      PDF
      DS6157

      HF/VHF/UHF RF power N-channel MOSFET

    • Description Version Size Action
      AN3232
      Mounting recommendations for STAC® and STAP® boltdown packages
      4.0
      1.67 MB
      PDF
      AN3232

      Mounting recommendations for STAC® and STAP® boltdown packages

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      STAC3932B ADS model 1.0
      673.57 KB
      ZIP

      STAC3932B ADS model

Sample & Buy

Part Number
Order from Distributors
Order from ST
Marketing Status
ECCN (US)
ECCN (EU)
Packing Type
Package
Temperature (°C) Budgetary Price (US$)*/Qty
min
max
STAC3932B No availability of distributors reported, please contact our sales office
Active
EAR99 NEC Loose Piece STAC780-4B - -

STAC3932B

Marketing Status

Active

ECCN (US)

EAR99

ECCN (EU)

NEC

Packing Type

Loose Piece

Package

STAC780-4B

Operating Temperature (°C)

(min)

-

(max)

-

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors