Rad-Hard Bipolar Transistors

Designed to meet high-reliability requirements in Space applications

ST's hi-rel and rad-hard bipolar transistors cover collector-emitter voltages up to 300 V and collector currents up to 5 A with linear hFE and low variation after radiation testing.

Both NPN and PNP devices are available in hermetic packages including surface-mount LCC-3, UB, SMD.5 and power through-hole TO-257AA. Dual NPN and PNP complementary pairs are also available in single LCC-6 and Flat-8 packages.

ST's high-reliability and radiation-hardened products are ESCC qualified and available in rad-hard versions with a Total Ionizing Dose (TID) radiation level up to 100 krad.

ST is committed to further enlarge the product range targeting high efficient power conversion, electric propulsion and TWT cathode bias applications.