STW81200

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Wide Band Frac-Integer-N Integrated Synthesizer

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Product overview

Description

The STW81200 is a dual architecture frequency synthesizer (Fractional-N and Integer-N), that features three low phase-noise VCOs with a fundamental frequency range of 3.0 GHz to 6.0 GHz and a programmable dual RF output divider stage which allows coverage from 46.875 MHz to 6 GHz.

The STW81200 optimizes size and cost of the final application thanks to the integration of low- noise LDO voltage regulators and internally-matched broadband RF outputs.

The STW81200 is compatible with a wide range of supply voltages (from 3.0 V to 5.4 V) providing to the end user a very high level of flexibility which trades off excellent performance with power dissipation requirements. A low-power functional mode (software controlled) gives an extra power saving.

Additional features include crystal oscillator core, external VCO mode and output-mute function.

  • All features

    • Output frequency range: 46.875 to 6000 MHz
    • Very low noise
      • Normalized in band phase noise floor: -227 dBc/Hz
      • VCO phase noise: -135 dBc/Hz @ 1 MHz offset, 4.0 GHz carrier
      • Noise floor: -160 dBc/Hz
    • Dual architecture frequency synthesizer: Fractional-N and Integer-N
    • Integrated VCOs with automatic center frequency calibration
    • Programmable RF output dividers by 1/2/4/8/16/32/64
    • Dual RF Output broadband matched with programmable power level and mute function
    • External VCO option with 5 V charge pump
    • Integrated low noise LDO voltage regulators
    • Maximum phase detector frequency: 100 MHz
    • Exact frequency mode
    • Fast lock and cycle slip reduction
    • Differential reference clock input (LVDS and LVECPL compliant) supporting up to 800 MHz
    • 13-bit programmable reference frequency divider
    • Programmable charge pump current
    • Digital lock detector
    • Integrated reference crystal oscillator core
    • R/W SPI interface
    • Logic compatibility/tolerance 1.8 V/3.3 V
    • Low power functional mode
    • Supply voltage: 3.0 V to 5.4 V
    • Small size exposed pad VFQFPN36 package 6 x 6 x 1.0 mm
    • Process: BICMOS 0.25 μm SiGe

Circuit Diagram

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STMicroelectronics - STW81200

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STW81200T
Active
VFQFPN 36 6x6x1.0 mm Industrial Ecopack2
STW81200TR
Active
VFQFPN 36 6x6x1.0 mm Industrial Ecopack2

STW81200T

Package:

VFQFPN 36 6x6x1.0 mm

Material Declaration**:

PDF XML

Marketing Status

Active

Package

VFQFPN 36 6x6x1.0 mm

Grade

Industrial

RoHS Compliance Grade

Ecopack2

STW81200TR

Package:

VFQFPN 36 6x6x1.0 mm

Material Declaration**:

PDF XML

Marketing Status

Active

Package

VFQFPN 36 6x6x1.0 mm

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors