Product overview
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
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All features
- Fully characterized at 125 ˚C
- Very high switching speed
- In compliance with the 2002/93/EC European Directive
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
- Integrated free-wheeling diode
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Large RBSOA
- Low spread of dynamic parameters
EDA Symbols, Footprints and 3D Models
STMicroelectronics - STB13007DT4
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Symbols
Footprints
3D models
Quality and Reliability
| Part Number | Marketing Status | Package | Grade | RoHS Compliance Grade | Longevity Commitment | Longevity Starting Date | Material Declaration** |
|---|---|---|---|---|---|---|---|
| STB13007DT4 | Active Product is in volume production. | D2PAK | Industrial | Ecopack2 | - | - |
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.
Sample & Buy
| Budgetary Price (US$)*/Qty | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STB13007DT4 | 2 distributors | Active | D2PAK | Tape and Reel | SINGAPORE | EAR99 | NEC | - | - | |
Buy Direct at ST (*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors