The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
- Fully characterized at 125 ˚C
- Very high switching speed
- In compliance with the 2002/93/EC European Directive
- Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
- Integrated free-wheeling diode
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Large RBSOA
- Low spread of dynamic parameters
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