STB13007DT4

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High voltage fast-switching NPN power transistor

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Product overview

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

  • All features

    • Fully characterized at 125 ˚C
    • Very high switching speed
    • In compliance with the 2002/93/EC European Directive
    • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range
    • Integrated free-wheeling diode
    • High voltage capability
    • Minimum lot-to-lot spread for reliable operation
    • Large RBSOA
    • Low spread of dynamic parameters

EDA Symbols, Footprints and 3D Models

STMicroelectronics - STB13007DT4

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Quality and Reliability

Part Number Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STB13007DT4
Active
D2PAK Industrial Ecopack2

STB13007DT4

Package:

D2PAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

D2PAK

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.

Sample & Buy

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STB13007DT4 Available at distributors

Distributor availability of STB13007DT4

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Active
EAR99 NEC Tape and Reel D2PAK - - CHINA

STB13007DT4 Active

Package:
D2PAK
ECCN (US):
EAR99
Budgetary Price (US$)*/Qty:
-

Part Number:

STB13007DT4

ECCN (EU):

NEC

Packing Type:

Tape and Reel

Operating Temperature (°C)

Min:

-

Max:

-

Country of Origin:

CHINA

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(*) Suggested Resale Price (USD) per defined quantity for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office or our Distributors